1·Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface.
外延沉积接着用以形成一外延层于该外延表面上。
2·The second epitaxial layer is disposed over the collector layer and doped to have the first conductivity type.
第二外延层被布置在收集器层上并且被掺杂为具有第一导电类型。
3·The first epitaxial layer is disposed over the substrate and doped to have the first conductivity type as well.
第一外延层被布置在衬底之上并且被掺杂为也具有第一导电类型。
4·The light collection region collects photo-generated charge carriers and is disposed within the second epitaxial layer.
光收集区域收集光生电荷载流子并被布置在第二外延层内。
5·The experimental results prove that the fall time of IGBT increases when increasing the thickness of the epitaxial layer.
实验结果证明IGBT的下降时间随着外延层厚度的增加而增加。
6·The collector layer is selectively disposed over at least a portion of the first epitaxial layer and doped to have a second conductivity type.
收集器层被选择性地布置在第一外延层的至少一部分上并且被掺杂为具有第二导电类型。
7·For the parameter of the epitaxial layer, putting forward a series of measures that let up or repress deposition and self-doping when the epilayer processing, improve the epilayer quality.
对于外延层必须达到的工艺参数，提出了一系列减小或抑制外延过程中扩散效应和自掺杂效应的工艺措施和方案，使外延层质量有了明显的提高；
8·By utilizing the method, the doping concentration of the epitaxial layer is regulated to increase the widening of the depletion region so as to further improve the photon absorption efficiency.
利用本发明的方法，通过外延层的掺杂浓度来调节以增加耗尽区的展宽，可进一步提高光子吸收效率。
9·Using the photovoltaic spectral response of epitaxial P-N junction, the paper suggests a method of determining the minority carrier diffusion length in N layer of N/P epitaxial silicon wafer.
本文提出了用N/P硅外延片的结光电压光谱响应确定N/P硅外延片中少子扩散长度的方法。
10·Modern advanced epitaxial growth technology has made the widely application of SiGe strained layer materials possible.
现代先进的外延技术使应变层锗硅材料的应用成为可能。