1·Electromigration in metal thin film interconnection is one of the important problems for VLSI reliability.
金属薄膜互连的电迁移现象是VLSI最重要的可靠性问题之一。
2·Therefore, the reasons and the influencing factors of IR-drop and electromigration are discussed firstly.
针对这个问题,本文首先介绍了IR压降和电迁移现象的产生原因及其影响因素。
3·Electromigration is the movement of metal atoms in the direction of current flow.
电迁移是金属原子沿着电流方向的移动。