1·The physical origin of the ferromagnetism and antiferromagnetism was explained.
对材料产生铁磁性和反铁磁性的物理根源进行解释。
2·The ferromagnetism can be significantly improved since the doping of Co changes the G antiferromagnetic order into the ferromagnetic one.
掺杂导致原有的G型反铁磁序发生变化，形成了亚铁磁序的磁结构，材料的铁磁性有了很大提高；
3·Metal clusters and metal oxides also have been excluded for the origin of the ferromagnetism in samples.
对于样品铁磁性来源，排除了磁性离子团簇及金属氧化物的可能性。
4·The room temperature ferromagnetism in Co-doped ZnO films with different carrier concentration fabricated by the sol–gel method at different annealing atmospheres was investigated.
用溶胶–凝胶法制备的钴掺杂氧化锌薄膜在不同气氛下退火后均显示室温铁磁性，并且具有不同的载流子浓度。