1·The design technique for a CMOS four quadrant analog multiplier is presented, which is based on the characteristics of the MOSFET subthreshold region.
讨论了基于MOS晶体管亚阈值区特性的CMOS四象限模拟乘法器的设计。
2·This model predicts an increased electron density with an increasing channel depth in subthreshold region or mild inversion region.
该模型预测的电子密度增加,增加航道水深在亚阈值区或温和反转区域。