silicide英文翻译_含义_读音_silicide例句_月亮词典

silicide

英音[ ˈsɪlɪˌsaɪd ] 美音[ ˈsɪlɪˌsaɪd ]

硅化物

常用释义

词性释义

n.

[无化] 硅化物

例句

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硅化物

and a spacer on a side of the gate oxide layer pattern, the metal nitride layer pattern, and the silicide.

以及在该栅极氧化层图案、该金属氮化层图案和该硅化物的侧面上的间隔物。

The semiconductor junction diode comprises silicon, the silicon crystallized in contact with a silicide.

半导体结型二极管包括硅，所述硅与硅化物相接触时结晶化。

The silicide may provide a template for crystallization, decreasing the defect density of the silicon and improving its conductivity.

硅化物可以提供用于结晶化的模板，降低了硅的缺陷密度并且提高了其导电性。

The invention discloses a preparation method of magnesium silicide and a device thereof.

本发明公开了一种硅化镁的制备方法与装置。

A suitable inoculant , such as calcium silicide or equivalent, is to be added to the metal stream as the furnace is tapped.

当熔炉运行的时候，可以在金属溶液里加一种合适的变质剂，例如钙化剂或者其他的等价物。

The invention is a preparation method of metal silicide film by microwave hydrogen plasma, relates to film preparation field.

一种微波氢等离子体制备金属硅化物薄膜的方法，用于薄膜制备领域。

The metal silicide layer prepared by the method has high heat stability and controllable growth speed.

本发明方法制备的金属硅化物层热稳定性高，且生长速度可控。

Metal silicide films are extensively used as contact meterials in Ultra-large Scale Integrated Circuits (ULSI).

金属硅化物薄膜是广泛应用于超大规模集成电路器件的重要电子材料。

Several years ago, it was found that rare-earth metal silicide could self-organize into nano wires on the Si(001) surface.

几年以前，人们就发现稀土金属在Si（001）表面可以通过自组装生长获得纳米结构。

In the first section, the improvement of nickel silicide on the junction diode was demonstrated.

第一部分我们探讨矽化镍薄膜于接面二极体的制程改善。

thermal annealing the metal to form a metal silicide layer.

对所述金属进行热退火形成金属硅化物层。

and producing a silicide from the metal and the lower gate conductor.

以及由金属和下栅极导体产生硅化物。

Design and fabrication of novel 3D vertical metal silicide nanostructure arrays. 9.

新颖3D垂直式金属矽化物奈米结构阵列之设计与制备。

Other silicide layers (50. 4-50. 6) are on the tops of the source, drain and polysilicon gate.

其它硅化物层（50.4-50.6）处于源极、漏极和多晶硅栅极的顶部。

The polysilicon tiles (14. 1, 14. 2) have silicide layers (50. 1, 50. 2).

所述多晶硅瓦片（14.1、14.2）具有硅化物层（50.1、50.2）。

Direct patterning of nanometer-scale silicide structures on silicon by ion-beam implantation through a thin barrier layer

离子束通过薄阻隔层在硅上直接印刷纳米级硅化物结构

Thermodynamic Analysis of the Reaction of the Nb Silicide-based Superalloys with Oxide Coatings for the Graphite Crucibles

铌硅化物基超高温合金与石墨坩埚氧化物涂层反应的热力学分析

Ion Beam Synthesis and Electrical Properties Study of Yttrium Silicide

钇硅化物的合成及相变研究

Preparation and structural formation of oxidation-resistant silicide coatings on Nb-based alloy by pack cementation technique

铌基合金包埋渗法制备抗氧化硅化物涂层及其组织形成

Developments in an Advanced Niobium-Niobium Silicide Based in-Situ Composite

新型铌-硅基共晶自生复合材料的研究进展

Irradiation behavior of experimental miniature uranium silicide fuel plates

实验性微型硅化铀燃料板的辐照性能

Structural phase transformation in yttrium silicide prepared by ion beam synthesis

离子束合成的钇硅化物结构相变研究

Research Progress on Properties of Precipitating Silicide Phase in Titanium Alloy

钛合金中硅化物析出相性能研究进展

The fabrication and performance of Canadian silicide dispersion fuel for test reactors

加拿大试验堆硅化物弥散燃料的制造与性能

Mechanism of Disintegration of RE-Silicide Alloy Containing Phosphorus

含磷稀土硅化物合金粉化机制的微观研究

Technique Research of Microwave Schottky Silicide Barrier Diodes

微波肖特基势垒二极管硅化物工艺技术研究

Thermal compatibility studies of unirradiated uranium silicide dispersed in aluminum

非辐照铝基铀硅弥散体的热相容性研究

Silicide Coatings on Niobium Alloys Prepared by Complex Pack Cementation

复合包渗法制备铌合金表面硅化物涂层

Investigation of Pure Polycrystalline Nickel Silicide Film on Thin Oxide

在薄二氧化硅层上纯多晶硅化镍膜的研究

Silicide Technology for Integrated Circuits

集成电路的硅化物技术

1·The invention belongs to the technical field of microelectronic devices, in particular to a method for forming ultrathin controllable metal silicide.

本发明属于微电子器件技术领域，具体为一种形成超薄可控的金属硅化物的方法。

2·The metal silicide layer prepared by the method has high heat stability and controllable growth speed.

本发明方法制备的金属硅化物层热稳定性高，且生长速度可控。

3·Other silicide layers (50.4-50.6) are on the tops of the source, drain and polysilicon gate.

其它硅化物层(50.4 - 50.6)处于源极、漏极和多晶硅栅极的顶部。

4·Carbene and silylene are two kinds of reactive activity intermediates which belong to carbide and silicide separately, but they are quite similar.

碳烯和硅烯是分属于碳化物和硅化物中的两类反应活性中间体。两者甚为相似。

5·The polysilicon tiles (14.1, 14.2) have silicide layers (50.1, 50.2).

所述多晶硅瓦片（14.1、14.2）具有硅化物层（50.1、50.2）。